愛普生高質(zhì)量有源晶振X1G004611A003超級(jí)適合汽車胎壓監(jiān)測(cè)
來源:http://m.cbjur26.cn 作者:iuys 2023年05月12
愛普生高質(zhì)量有源晶振X1G004611A003超級(jí)適合汽車胎壓監(jiān)測(cè),愛普生公司是日系晶振品牌的領(lǐng)先者,秉持著創(chuàng)新的理念,持續(xù)不斷向社會(huì)創(chuàng)造價(jià)值,同時(shí)也根據(jù)市場(chǎng)需求調(diào)整與優(yōu)化自身的產(chǎn)品線,并為用戶提供高于用戶滿意度的有源晶振產(chǎn)品,使得EPSON公司贏得無數(shù)用戶的歡心,這也是愛普生公司成立初心,始終堅(jiān)守創(chuàng)新型的產(chǎn)品,把控好產(chǎn)品的品質(zhì),做到嚴(yán)于律己,精益求精。主要向市場(chǎng)提供的晶振產(chǎn)品包含水晶振動(dòng)子,有源晶振,溫補(bǔ)晶振,壓控晶振等產(chǎn)品。

愛普生高質(zhì)量有源晶振X1G004611A003超級(jí)適合汽車胎壓監(jiān)測(cè),基于愛普生晶振解決社會(huì)問題的決心,愛普生已經(jīng)確定了我們公司可以發(fā)揮重要作用的具體領(lǐng)域。使用基于我們獨(dú)特的核心技術(shù)的創(chuàng)新,我們可以提供社會(huì)、環(huán)境和經(jīng)濟(jì)價(jià)值,幫助實(shí)現(xiàn)可持續(xù)發(fā)展和豐富社區(qū)。這個(gè)故事與聯(lián)合國制定的可持續(xù)發(fā)展目標(biāo)有著相同的目標(biāo)。它旨在強(qiáng)調(diào)我們目標(biāo)的基本原則以及我們?nèi)绾螌?shí)現(xiàn)目標(biāo)。
根據(jù)市場(chǎng)的需求,愛普生公司用心專研當(dāng)下的需求,針對(duì)性發(fā)布編碼X1G004611A003,石英晶體振蕩器,型號(hào)SG-210SEBA,尺寸為2520mm,頻率為27MHZ,電壓1.6~2.2V,輸出CMOS,頻率穩(wěn)定度10ppm,工作溫度-40to125°C,具備良好的耐壓性能和高可靠性能,非常適合用于汽車胎壓監(jiān)測(cè),羅拉模塊,通信模塊,儀器設(shè)備,無線藍(lán)牙,智能家居等領(lǐng)域.

愛普生高質(zhì)量有源晶振X1G004611A003超級(jí)適合汽車胎壓監(jiān)測(cè),基于愛普生晶振解決社會(huì)問題的決心,愛普生已經(jīng)確定了我們公司可以發(fā)揮重要作用的具體領(lǐng)域。使用基于我們獨(dú)特的核心技術(shù)的創(chuàng)新,我們可以提供社會(huì)、環(huán)境和經(jīng)濟(jì)價(jià)值,幫助實(shí)現(xiàn)可持續(xù)發(fā)展和豐富社區(qū)。這個(gè)故事與聯(lián)合國制定的可持續(xù)發(fā)展目標(biāo)有著相同的目標(biāo)。它旨在強(qiáng)調(diào)我們目標(biāo)的基本原則以及我們?nèi)绾螌?shí)現(xiàn)目標(biāo)。
編碼 | Model/型號(hào) | Frequency/頻率 | LxWxH/尺寸 | Output Wave/輸出方式 | Supply Voltage/電源電壓 | Ope Temperature/工作溫度 |
X1G0036410002 | SG-211SEE | 40.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410003 | SG-211SEE | 40.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410004 | SG-211SEE | 11.289600 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -20 to 70 °C |
X1G0036410005 | SG-211SEE | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -20 to 70 °C |
X1G0036410006 | SG-211SEE | 37.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -20 to 70 °C |
X1G0036410008 | SG-211SEE | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -20 to 70 °C |
X1G0036410009 | SG-211SEE | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410010 | SG-211SEE | 38.400000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -20 to 70 °C |
X1G0036410011 | SG-211SEE | 49.152000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410013 | SG-211SEE | 19.200000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -20 to 70 °C |
X1G0036410014 | SG-211SEE | 11.289600 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410015 | SG-211SEE | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410016 | SG-211SEE | 38.400000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410017 | SG-211SEE | 12.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410018 | SG-211SEE | 13.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410019 | SG-211SEE | 24.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410020 | SG-211SEE | 33.333300 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -20 to 70 °C |
X1G0036410022 | SG-211SEE | 38.400000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410023 | SG-211SEE | 27.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -20 to 70 °C |
X1G0036410024 | SG-211SEE | 38.400000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 90 °C |
X1G0036410025 | SG-211SEE | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -20 to 70 °C |
X1G0036410026 | SG-211SEE | 50.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 90 °C |
X1G0036410027 | SG-211SEE | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 90 °C |
X1G0036410028 | SG-211SEE | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410030 | SG-211SEE | 37.400000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410031 | SG-211SEE | 12.288000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410032 | SG-211SEE | 27.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410033 | SG-211SEE | 27.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410034 | SG-211SEE | 24.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410035 | SG-211SEE | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -20 to 70 °C |
X1G0036410036 | SG-211SEE | 4.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410037 | SG-211SEE | 15.625000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410038 | SG-211SEE | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 90 °C |
X1G0036410039 | SG-211SEE | 24.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 90 °C |
X1G0036410041 | SG-211SEE | 50.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410042 | SG-211SEE | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 90 °C |
X1G0036410043 | SG-211SEE | 19.200000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -20 to 70 °C |
X1G0036410044 | SG-211SEE | 37.125000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G0036410045 | SG-211SEE進(jìn)口晶振 | 27.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.600 to 2.200 V | -20 to 70 °C |
X1G004611A002 | SG-210SEBA | 19.200000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A003 | SG-210SEBA | 27.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 125 °C |
X1G004611A004 | SG-210SEBA | 20.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 125 °C |
X1G004611A005 | SG-210SEBA | 27.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A006 | SG-210SEBA | 26.973027 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A007 | SG-210SEBA | 37.500000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A010 | SG-210SEBA | 20.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G004611A011 | SG-210SEBA | 40.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A012 | SG-210SEBA | 24.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A013 | SG-210SEBA | 33.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G004611A014 | SG-210SEBA | 16.666600 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G004611A016 | SG-210SEBA | 14.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A017 | SG-210SEBA | 37.125000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
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